Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics
Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics
复制标题
DOI：
10.1016/j.mee.2016.12.018
复制
发表时间：
2017-04-25
影响因子：
2.3
通讯作者：
Hilleringmann, Ulrich
中科院分区：
文献类型：
--
作者：
Meyers, Thorsten;Vidor, Fabio F.;Hilleringmann, Ulrich
在这篇文章中，我们提出了一种集成技术的低电压DNTT为基础的TFT灵活的电子应用。因此，高k纳米复合材料结合其聚合物基体的柔性和所并入的无机材料的高介电常数被用作栅极电介质层。传统的光刻工艺对介电层的影响进行了分析，在器件特性的电气不稳定性。实施的牺牲层，以减少化学应力的绝缘膜在光刻过程中的影响进行了评估。此外，第一逆变器电路集成和电气特性。此外，该牺牲层的实现可以用于未来的互补电路设计。(C)2016爱思唯尔B.V.保留所有权利。
In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications. Therefore, a high-k nanocomposite combining the flexibility of its polymeric matrix and the high permittivity of the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional photolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics. The impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during photolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized. Additionally, the implementation of this sacrificial layer can be used for future complementary circuit design. (C) 2016 Elsevier B.V. All rights reserved.