Low-noise double-sided silicon strip detector for soft gamma-ray Compton camera

Low-noise double-sided silicon strip detector for soft gamma-ray Compton camera
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用于软伽马射线康普顿相机的低噪声双面硅条探测器

DOI:
10.1117/12.550764
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发表时间:
2004
期刊:
影响因子:
56.9
通讯作者:
K. Nakazawa
K. Nakazawa
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Y. Fukazawa;T. Nakamoto;Naoyuki Sawamoto;S. Uno;T. Ohsugi;H. Tajima;Tadayuki Takahashi;T. Mitani;Takaaki Tanaka;K. Nakazawa

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半导体多康普顿望远镜(SMCT)有望在0.1-20 MeV的能量范围内进行高灵敏度的软伽马射线观测。双面硅条探测器(DSSD)具有高能量分辨率和高散射效率,是构建SMCT的关键技术之一,也是高阻挡半导体CdTe的关键技术之一。通过优化数字信号处理器的几何结构,研制了一套适用于SMCT的低噪声数字信号处理器和前端大规模集成电路系统。因此,在-10°C的多通道读数中,60keV和122keV的能量分辨率为1.3keV(FWHM)。伽马射线的反应,如图像平坦度和电荷分裂,被发现不是问题。我们还证明了我们的系统获得了良好的角度分辨率,接近康普顿成像中的多普勒展宽极限。
A Semiconductor Multiple-Compton Telescope (SMCT) is expected to proceed a high-sensitivity soft gamma-ray observation in the energy range of 0.1-20 MeV. Double-sided silicon strip detector (DSSD) is one of key technologies for constructing SMCT, as well as the high-stopping semiconductor CdTe, because of its high energy resolution and high scattering efficiency. We have developed a low-noise system of DSSD and frontend LSI for SMCT, by optimizing geometrical structures of DSSD. We have thus obtained an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at -10°C in the multi-channel reading. Gamma-ray responses such as image flatness and charge splittings were found to be not problematic. We also demonstrated that our system achieved the good angular resolution close to the Doppler-broadening limit in the Compton imaging by two DSSDs.
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DOI: --
发表时间: 2006
期刊: Nuclear Instruments and Methods A 567
影响因子: --
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DOI: --
发表时间: 2004
期刊: IEEE Trans.Nucl.Sci Vol.51 No.3III
影响因子: --
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