Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by a Topological Insulator
Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by a Topological Insulator
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由拓扑绝缘体定制的晶圆级二维范德华 Fe3GeTe2 中的室温以上铁磁性
DOI：
10.1021/acsnano.0c03152
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发表时间：
2020
期刊：
影响因子：
17.1
通讯作者：
Wang Kang L.
中科院分区：
文献类型：
--
作者：
Wang Haiyu;Liu Yingjie;Wu Peichen;Hou Wenjie;Jiang Yuhao;Li Xiaohui;P;ey Ch;an;Chen Dongdong;Yang Qing;Wang Hangtian;Wei Dahai;Lei Na;Kang Wang;Wen Lianggong;Nie Tianxiao;Zhao Weisheng;Wang Kang L.
新兴的二维铁磁材料具有原子层厚度和完美的界面特征，已成为低功耗和深纳米集成自旋电子学领域的一个引人注目的研究方向。然而，它已被证明是极具挑战性的，以实现良好的控制尺寸，大规模生产，方便的异质集成的室温铁磁候选人。在这里，我们报告的晶圆级二维Fe3GeTe2集成与拓扑绝缘体Bi2Te3的分子束外延生长，这表明居里温度（Tc）高达400 K的垂直磁各向异性。依赖于磁化率的磁性和磁输运测量发现，Tc随着异质结构中Fe3GeTe2厚度的减小而增加，表明Bi2Te3的界面工程效应。理论计算进一步证明了界面交换耦合可以显著增强Fe3GeTe2的层内自旋相互作用，从而提高Tc.我们的研究结果为基于二维铁磁材料的高性能自旋电子器件的实现提供了巨大的潜力。
The emerging two-dimensional ferromagnetic materials present atomic layer thickness and a perfect interface feature, which have become an attractive research direction in the field of spintronics for low power and deep nanoscale integration. However, it has been proven to be extremely challenging to achieve a room-temperature ferromagnetic candidate with well controlled dimensionality, large-scale production, and convenient heterogeneous integration. Here, we report the growth of wafer-scale two-dimensional Fe3GeTe2integrated with a topological insulator of Bi2Te3by molecular beam epitaxy, which shows a Curie temperature (Tc) up to 400 K with perpendicular magnetic anisotropy. Dimensionality-dependent magnetic and magnetotransport measurements find thatTcincreases with decreasing Fe3GeTe2thickness in the heterostructures, indicating an interfacial engineering effect from Bi2Te3. The theoretical calculation further proves that the interfacial exchange coupling could significantly enhance the intralayer spin interaction in Fe3GeTe2, hence giving rise to a higherTc. Our results provide great potential for the implementation of high-performance spintronic devices based on two-dimensional ferromagnetic materials.