Effect of Pressure on Hopping Conduction in Amorphous Ge Alloys
Effect of Pressure on Hopping Conduction in Amorphous Ge Alloys
复制标题
压力对非晶锗合金跳变导电的影响
DOI：
10.4131/jshpreview.7.647
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
K. Tsuji
中科院分区：
文献类型：
--
作者：
N. Toda;Y. Katayama;K. Tsuji
在压力P ~ 8 GPa，温度T为77- 300 K的条件下，测量了蒸发非晶态Ge（a-Ge），a-Ge-Cu合金和a-Ge-Al合金的电导率σ。在低于150 K的低温下，σ的T依赖性很好地用幂律来描述，这是由弱电子-晶格耦合的多声子隧穿过程模型而不是Mott的变程跳跃导电模型所预期的。幂律中的指数n随着压力的增加而变化。对于a-Ge_（1-x）Cux和a-Ge_（1-x）Alx合金，d（ln_n）/dP在低压区为正值，在高压区为负值。从几个跳跃传导模型的结果进行了讨论。
The electrical conductivity σ has been measured at pressures P to 8 GPa and temperatures T of 77-300K in evaporated amorphous Ge (a-Ge), a-Ge-Cu alloys and a-Ge-Al alloys. The T dependence of σ is well described by a power law at low temperatures below 150 K, which is expected from a multi-phonon tunneling transition process model with weak electron-lattice coupling, rather than the Mott's variable range hopping conduction model. The exponent n in the power law changes with increasing pressure. For both a-Ge1-xCux and a-Ge1-xAlx alloys, d (ln n) /dP show positive values in the low pressure region and negative values in the high pressure region. Results are discussed from several hopping conduction models.