Properties of zinc oxide films grown on sapphire substrates using high-temperature H2O generated by a catalytic reaction on platinum nanoparticles
Properties of zinc oxide films grown on sapphire substrates using high-temperature H2O generated by a catalytic reaction on platinum nanoparticles
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DOI：
10.1116/1.4831969
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发表时间：
2014-03
期刊：
影响因子：
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通讯作者：
K. Yasui;T. Takeuchi;Eichi Nagatomi;Souichi Satomoto;H. Miura;T. Kato;T. Konya
中科院分区：
文献类型：
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作者：
K. Yasui;T. Takeuchi;Eichi Nagatomi;Souichi Satomoto;H. Miura;T. Kato;T. Konya
研究了在773 ~ 873 K条件下生长在平面（11-20）蓝宝石衬底上的ZnO薄膜的特性，采用了二甲基锌与Pt纳米颗粒催化反应生成的高温水之间的反应。生长速率为0.02 ~ 0.07 μm min−1。ZnO薄膜的最大电子迁移率和最小剩余载流子浓度分别为169 cm2 V−1 s−1和1.6 × 1017 cm−3。ZnO薄膜的x射线衍射图显示出与ZnO（0001）平面相关的强（0002）和（0004）峰。ZnO（0002）的ω-摇摆曲线在半最大值处的最小全宽度小于0.1°。在具有高电子迁移率的ZnO薄膜中，使用ZnO （10-10） ϕ扫描没有发现旋转畴。通过二次离子质谱法测定了氢的浓度为3 × 1018 cm−3，硼的浓度为2-5 × 1017 cm−3。这些被鉴定为外来供体杂质。
The authors investigated the characteristics of ZnO films grown on a-plane (11-20) sapphire substrates at 773–873 K using a reaction between dimethylzinc and high-temperature H2O generated by a catalytic reaction on Pt nanoparticles. The growth rate was 0.02–0.07 μm min−1. The largest electron mobility and the smallest residual carrier concentration for the ZnO films were 169 cm2 V−1 s−1 and 1.6 × 1017 cm−3, respectively. X-ray diffraction patterns for the ZnO films exhibited intense (0002) and (0004) peaks associated with ZnO (0001) planes. The minimum full width at half maximum of the ω-rocking curve for ZnO (0002) was less than 0.1°. In a ZnO film with a high electron mobility, no rotational domains were identified using a ZnO (10-10) ϕ scan. From secondary ion mass spectroscopy, a hydrogen concentration of 3 × 1018 cm−3 and a boron concentration of 2–5 × 1017 cm−3 were determined. These were identified as extrinsic donor impurities.