Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films
Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films
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DOI：
10.1063/1.3651275
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发表时间：
2011-10-10
影响因子：
4
通讯作者：
Kolobov, Alexander V.
中科院分区：
文献类型：
--
作者：
Tominaga, Junji;Simpson, Robert E.;Kolobov, Alexander V.
与相同平均组成的单片合金相比，相变GeTe/Sb 2 Te 3多层结构（其中层界面处的原子运动限于一维）已被证明需要显着更低的开关能。本文报道了在GeTe/Sb_2Te_3超晶格中，当温度超过400 K时，外加电场可诱导出Δ R/R > 2000%的超大磁电阻效应。这一发现为开发结合了相变和磁性数据存储优点的联合收割机概念上的新存储器设备铺平了道路。(C)2011年美国物理学会。[doi：10.1063/1.3651275]
Phase-change GeTe/Sb2Te3 multilayered structures, in which the atomic motion at the layer interfaces is limited to one dimension, have been shown to require substantially lower switching energies when compared to monolithic alloys of the same average composition. Here, we report that in the GeTe/Sb2Te3 superlattice, an extraordinarily large magnetoresistance of Delta R/R > 2000% can be induced by application of an electrical field at temperatures exceeding 400 K. This finding paves the way for development of conceptually new memory devices that combine the merits of both phase-change and magnetic data storage. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651275]