Influence of GaInP ordering on the performance of GaInP solar cells
Influence of GaInP ordering on the performance of GaInP solar cells
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DOI：
10.1088/1674-4926/37/7/073001
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发表时间：
2016-07
影响因子：
5.1
通讯作者：
Yu Shuzhen;Dong Jianrong;Zhao Yongming;Sun Yurun;Li Kuilong;Zeng Xulu;Yang Hui
中科院分区：
文献类型：
--
作者：
Yu Shuzhen;Dong Jianrong;Zhao Yongming;Sun Yurun;Li Kuilong;Zeng Xulu;Yang Hui
在GaInP中，生长条件非常接近于在金属有机化学气相沉积中获得最高质量的材料，因此在GaInP中总是出现具有不希望的性质的CuPt型有序。在本工作中，通过优化生长条件，获得了高质量、高度无序的GaInP。AlGaInP/GaInP/AlGaInP双异质结(DHS)的室温和低温光致发光(PL)谱表明，通过优化生长温度、V/III比和反应器压力可以提高带边发射强度，但由于有序性缺陷而导致空间间接复合产生低能峰。有序性缺陷较少的DH样品具有较长的有效少数载流子寿命，因此，GaInP太阳电池的性能有了显著的提高。
CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room temperature and low-temperature photoluminescence (PL) spectra of AlGaInP/GaInP/AlGaInP double heterostructures (DHs) reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.