Electronic structures of ternary-layered semiconductor TlGaSe2 investigated by photoemission spectroscopy
Electronic structures of ternary-layered semiconductor TlGaSe2 investigated by photoemission spectroscopy
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光电子能谱研究三元层半导体 TlGaSe2 的电子结构
DOI：
10.1002/pssc.201200863
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
N. Mamedov
中科院分区：
文献类型：
--
作者：
S. Motonami;K. Mimura;Y. G. Shim;K. Wakita;H. Sato;Y. Utsumi;S. Ueda;M. Nakatake;K. Shimada;Y. Taguchi;K. Kobayashi;H. Namatame;M. Taniguchi;G. Orudzhev;N. Mamedov
用硬X射线光电子能谱和软X射线光电子能谱（HAXPES和SXPES）研究了三层半导体TlGaSe2的电子结构。从HAXPES和SXPES获得的所有核心水平的光谱形状可以表示为对称的洛伦兹，反映了半导体性质的TlGaSe 2。从HAXPES和SXPES得到的相同本体组分的峰位置几乎相同。这表明，反冲效应是可解释的TlGaSe 2和该材料的HAXPES光谱为我们提供的信息的内在体电子结构。价带HAXPES谱由两个主要特征组成，并通过理论计算很好地再现。能隙的估计值为2.0 eV，与光学测量的结果一致。（© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Electronic structures of the ternary‐layered semiconductor TlGaSe2have been investigated by hard and soft X‐ray photoemission spectroscopies (HAXPES and SXPES). The spectral shape of all core levels obtained from HAXPES and SXPES can be represented by a symmetric Lorentzian, reflecting the semiconducting nature of TlGaSe2. Peak positions of the same bulk components, obtained from HAXPES and SXPES, are almost the same. This suggests that the recoil effect is ignorable for TlGaSe2and that the HAXPES spectra of this material provide us the information on the intrinsic bulk electronic structures. The valence‐band HAXPES spectrum is composed of two main features and is well reproduced by the theoretical calculation. The estimated value of 2.0 eV for the energy gap is consistent with the results from the optical measurements. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)