Heteromaterial gate tunnel field effect transistor with lateral energy band profile modulation
Heteromaterial gate tunnel field effect transistor with lateral energy band profile modulation
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DOI：
10.1063/1.3574363
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发表时间：
2011-04
影响因子：
4
通讯作者：
Ning Cui;R. Liang;Jun Xu
中科院分区：
文献类型：
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作者：
Ning Cui;R. Liang;Jun Xu
介绍了一种异质栅极结构的隧道场效应晶体管（TFET）器件，研究了横向能带廓形调制效应对器件性能的影响。二维数值模拟结果表明，功函数失配会在通道内形成导带的局部极小值，导致导带和导带在导带和导带之间的突变和驱动电流的显著增强。特别是，这些独特的特性可以通过工程的异质材料和栅极长度来控制。本工作为提高纳米tfet的性能提供了一种有效的方法。
A tunnel field effect transistor (TFET) device with a heteromaterial gate structure was introduced, and the influence of the lateral energy band profile modulation effect on the performance of TFET devices has been investigated. The two-dimensional numerical simulations demonstrated that a local minimum of the conduction band in the channel was formed by work function mismatch, which resulted in the abrupt transition between the on- and off-states and significant drive current enhancement. In particular, these unique features could be manipulated by engineering the heteromaterial and the gate length. This work reveals an effective method to improve the performance of nanoscale TFETs.