Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
复制标题
掺氧外延 GaAs 和 AlxGa1-xAs 层的表征
DOI：
10.1063/1.105038
复制
发表时间：
1991
影响因子：
4
通讯作者：
R. Potemski
中科院分区：
文献类型：
--
作者：
M. Goorsky;T. Kuech;F. Cardone;P. Mooney;G. Scilla;R. Potemski
利用含氧金属有机前驱体二甲基甲基铝(≳)2AlOCH3，在金属有机气相外延过程中实现了GaAs层和Al0.30Ga0.70As外延层的有意氧掺杂(≳1017 cm−3)。氧和极低水平的Al(AlAs摩尔分数&0.005)的掺入导致了故意引入的Si施主的补偿。此外，还检测到了与氧有关的GaAs中的深能级。在AlxGa1−xAs生长过程中，二甲基甲醇铝的引入并没有改变Al的模组分，也没有降低三元层的结晶度，但确实包含了补偿Si施主的高水平的氧。在GaAs和Al0.30Ga0.70As中的补偿表明，在金属有机气相外延过程中可以通过氧掺杂来生长高阻缓冲层。
Intentional oxygen doping (≳1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen‐bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorporation of oxygen and very low levels of Al (AlAs mole fraction <0.005) in the GaAs layers leads to the compensation of intentionally introduced Si donors. Additionally, deep levels in GaAs associated with oxygen were detected. The introduction of dimethyl aluminum methoxide during AlxGa1−xAs growth did not alter Al mode fraction or degrade the crystallinity of the ternary layers, but did incorporate high levels of oxygen which compensated Si donors. The compensation in both GaAs and Al0.30Ga0.70As indicates that high resistivity buffer layers can be grown by oxygen doping during metalorganic vapor phase epitaxy.