Strain-induced oxide decomposition at SiO2/Si(001) and SiO2/Si(111) interfaces studied by X-ray photoelectron spectroscopy and scanning tunnelling microscopy
Strain-induced oxide decomposition at SiO2/Si(001) and SiO2/Si(111) interfaces studied by X-ray photoelectron spectroscopy and scanning tunnelling microscopy
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通过 X 射线光电子能谱和扫描隧道显微镜研究 SiO2/Si(001) 和 SiO2/Si(111) 界面处的应变诱导氧化物分解
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
and Y. Takakuwa
中科院分区：
文献类型：
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作者：
J. Tang;S. Ogawa;A. Yoshigoe;Y. Teraoka;and Y. Takakuwa
