High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
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DOI：
10.1088/0957-4484/22/27/275602
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发表时间：
2011-07-08
期刊：
影响因子：
3.5
通讯作者：
Caroff, P.
中科院分区：
文献类型：
--
作者：
Plissard, S.;Larrieu, G.;Caroff, P.
我们报告和详细的方法来实现垂直的自催化GaAs纳米线直接在Si（111）上的生长与接近完美的垂直产量，使用电子束定义的孔阵列在介电层和分子束外延。在我们的条件下，GaAs纳米线生长沿着气-液-固机制，使用原位自形成的Ga液滴。本文的重点是了解的作用，基板的准备和预生长条件。在不改变温度或V/III比的情况下，垂直纳米线的产率逐渐增加至95%。证明了实现非常密集的阵列的可能性，中心到中心的线间距离小于100 nm。
We report and detail a method to achieve growth of vertical self-catalyzed GaAs nanowires directly on Si(111) with a near-perfect vertical yield, using electron-beam-defined arrays of holes in a dielectric layer and molecular beam epitaxy. In our conditions, GaAs nanowires are grown along a vapor-liquid-solid mechanism, using in situ self-forming Ga droplets. The focus of this paper is to understand the role of the substrate preparation and of the pre-growth conditioning. Without changing temperature or the V/III ratio, the yield of vertical nanowires is increased incrementally up to 95%. The possibility to achieve very dense arrays, with center-to-center inter-wire distances less than 100 nm, is demonstrated.