Temperature dependence of structure and electrical properties of germanium-antimony-tellurium thin film
Temperature dependence of structure and electrical properties of germanium-antimony-tellurium thin film
复制标题
锗锑碲薄膜结构和电性能的温度依赖性
DOI：
10.1116/1.582409
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
Y. Vorobiev
中科院分区：
文献类型：
--
作者：
J. González;E. Prokhorov;Y. Vorobiev
Ge：Sb：Te薄膜是一种新型的光电存储材料，具有广阔的应用前景。这两种应用都是基于从非晶态到晶态的结构变化。因此，从基础和技术的角度来看，了解这种材料的结晶机制是很重要的。本文研究了热蒸发法制备的Ge：Sb：Te薄膜的晶化动力学。为此，在加热期间使用原位电阻和电容测量。采用Kissinger模型分析了非晶态到晶态的转变动力学，得到了晶化过程的激活能。使用X射线衍射，拉曼光谱和光学显微镜测量，我们已经观察到，在不同的加热速率加热过程中，薄膜的结晶伴随着由非晶组织形成的微米夹杂物的偏析，可能是一些偏析的杂质和结晶碲颗粒。这些夹杂物的数量和大小取决于加热速率。从我们的测量中，我们发现，电容测量是一个敏感的方法来分析薄膜的结晶过程。它提供了使用其他方法无法获得的额外信息。
The interest in the study of Ge:Sb:Te thin films is due to their use as optical and electrical memory materials. Both of these applications are based on the structural change from the amorphous to the crystalline state. Thus, understanding of the mechanism of crystallization in this material is important from basic and technological points of view. In this work we have studied the kinetics of the crystallization of Ge:Sb:Te films prepared by thermal evaporation. For that, in situ resistance and capacitance measurements during heating were used. The transformation kinetics from the amorphous to the crystalline state were analyzed using the Kissinger model, from which the activation energy of the crystallization process is obtained. Using x-ray diffraction, Raman spectroscopy and optical microscope measurements, we have observed that during heating at different heating rates, crystallization of the film is accompanied by the segregation of micrometric inclusions formed by amorphous tissue, perhaps some segregated impurities and crystalline tellurium particles. The number and size of these inclusions depend on the heating rate. From our measurements we found that the capacitance measurements is a sensitive method by which to analyze the crystallization process in thin films. It provides additional information not obtained using other methods.