Improvement of resistive memory switching in NiO using IrO2
Improvement of resistive memory switching in NiO using IrO2
复制标题
DOI：
10.1063/1.2210087
复制
发表时间：
2006-06-05
影响因子：
4
通讯作者：
Ryu, B. I.
中科院分区：
文献类型：
--
作者：
Kim, D. C.;Lee, M. J.;Ryu, B. I.
为了开发使用NiO的电阻式存储器器件，需要改进几种存储器开关特性。在具有贵金属电极的NiO存储器单元中，在连续存储器切换的情况下通常观察到存储器切换参数的宽分散。我们报告的改进，最大限度地减少分散体的所有存储器开关参数使用薄IrO2层之间的NiO和电极。讨论了薄IrO2层对NiO生长和存储器开关稳定性的作用。(c)2006年，美国物理学会。
For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin IrO2 layers between NiO and electrodes. The role of thin IrO2 layers on NiO growth and memory switching stabilization are discussed. (c) 2006 American Institute of Physics.