Fabrication of CdTe strip detectors for imaging applications
Fabrication of CdTe strip detectors for imaging applications
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制造用于成像应用的 CdTe 条形探测器
DOI：
10.1016/s0168-9002(00)00879-2
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发表时间：
2001
影响因子：
1.4
通讯作者：
Y. Hatanaka
中科院分区：
文献类型：
--
作者：
M. Niraula;D. Mochizuki;T. Aoki;Y. Tomita;Y. Hatanaka
p-i-n碲化镉条带探测器是一种新的简单的技术，可能应用于天体物理学和医学成像。探测器具有碘掺杂的n-CdTe外延层，随后在（111）取向CdTe晶体的te面上镀铝作为阳极。阴极由碱金属化合物的掺杂原子通过准分子激光辐射的图案阴影掩膜扩散在晶体上形成的p型分割区组成。之后，金电极通过同样的阴影掩膜蒸发，制成条形阴极。另一方面，我们还研究了通过掩模照射激光进行选择性区域刻蚀的激光烧蚀过程。本文将详细介绍这些制备条带探测器的工艺和激光辅助蚀刻工艺的结果。
p–i–n CdTe strip detectors were fabricated in a new and simple technique for their probable applications in astrophysics and medical imaging. The detector has an iodine-doped n-CdTe epitaxial layer followed by aluminum metallization on the Te-face of (111) oriented CdTe crystal, as an anode. The cathode consists of the p-type segmented regions formed on the crystal by the diffusion of dopant atoms from an alkaline metal compound through a patterned shadow mask using the excimer laser radiation. Afterward, the gold electrode is evaporated through the same shadow mask to make the strip cathodes. In a different way, we also studied the laser ablation process for the selective area etching by irradiating the laser through a mask. Details of these fabrication processes for making strip detectors and results on laser-assisted etching process will be presented.