A fast inversion method for highly conductive submicron wires on a substrate
A fast inversion method for highly conductive submicron wires on a substrate
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基板上高导电亚微米线的快速反转方法
DOI：
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发表时间：
2011
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通讯作者：
T. Wriedt
中科院分区：
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作者：
M. Karamehmedović;P. Hansen;T. Wriedt
本文提出了一种数值计算方法，用于在基片上制备高导电、可穿透和理想导电（PEC）的亚微米导线。为了提高效率，在逆Kirsch-Kress法的正演模型中采用了辅助源法。基于数值模拟的散射远场，估算了半无限大硅衬底上PEC和银线的圆形截面半径。照明是单色的，横向电（TE）偏振的，并且具有固定的入射角。在0.2-1.3倍和0.8-1.3倍自由空间工作波长的动态范围内，PEC和可穿透导线的平均相对误差分别小于1%和5%。在所有情况下，反转时间小于1秒。
A numerical method is presented for sizing of highly conductive penetrable and perfectly electrically conducting (PEC) submicron wires on substrates. For efficiency, the Method of Auxiliary Sources is used in the forward model of the inverse Kirsch-Kress Method. The radius of the circular cross section of PEC and silver wires positioned on a semi-infinite silicon substrate is estimated based on numerically simulated scattered far field. The illumination is monochromatic, transverse electric (TE) polarised, and with fixed angle of incidence. Average relative errors smaller than 1% and 5% are achieved for PEC and penetrable wires, respectively, in the dynamic ranges 0.2–1.3 and 0.8–1.3 times the operating free-space wavelength, respectively. In all cases, the inversion time is less than 1 sec.