Photovoltaic anomalous Hall effect in line-node semimetals
Photovoltaic anomalous Hall effect in line-node semimetals
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DOI：
10.1103/physrevb.94.155206
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发表时间：
2016-07
影响因子：
3.7
通讯作者：
K. Taguchi;Dong-Hui Xu;A. Yamakage;K. T. Law
中科院分区：
文献类型：
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作者：
K. Taguchi;Dong-Hui Xu;A. Yamakage;K. T. Law
本文从理论上研究了具有时间反演对称性和反转对称性的线结半金属中的圆偏振光诱导Floquet态。研究发现，当圆偏振光在体材料中的线节点处产生一个间隙并离开外尔点节点时，Floquet态可以表现出光伏反常霍尔效应。霍尔电导率对费米能级的位置很敏感：当费米能级位于节点处时，霍尔电导率取决于线节点的半径，几乎与光的强度无关。远离线节点，霍尔电导率取决于光的强度。霍尔电导率在弱强度激光存在下的灵敏费米能级依赖性可以应用于基于线节点半金属薄膜的光电晶体管。
We study theoretically the circularly polarized light-induced Floquet state in line-node semimetals with time-reversal symmetry and inversion symmetry. It is found that the Floquet state can show the photovoltaic anomalous Hall effect when an applied circularly polarized light creates a gap in the line node in the bulk and leaves Weyl point nodes. The Hall conductivity is sensitive to the location of the Fermi level: When the Fermi level is located at the node, the Hall conductivity depends on the radius of the line node and is nearly independent of the intensity of the light. Far from the line node, the Hall conductivity is dependent on the intensity of the light. The sensitive Fermi-level dependence of the Hall conductivity in the presence of a laser of weak intensity can have applications in phototransistors based on thin films of line-node semimetals.