Effects of electron-transfer chemical modification on the electrical characteristics of graphene
Effects of electron-transfer chemical modification on the electrical characteristics of graphene
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DOI：
10.1088/0957-4484/21/47/475208
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发表时间：
2010-11-26
期刊：
影响因子：
3.5
通讯作者：
Tanigaki, Katsumi
中科院分区：
文献类型：
--
作者：
Fan, Xiao-Yan;Nouchi, Ryo;Tanigaki, Katsumi
由于单层石墨烯对电子转移化学反应性强，采用4-硝基苯重氮四氟硼酸盐修饰石墨烯场效应晶体管的电学性能。改性后的石墨烯的转移特性表现为：最小电导率降低，电子-空穴迁移率不对称，电子/空穴迁移率降低，电荷中性点随最小电导率区变宽而正移动。这些现象归因于脱氮反应和石墨烯表面的吸附。
Because of the large reactivity of single layer graphene to electron-transfer chemistries, 4-nitrobenzene diazonium tetrafluoroborate is employed to modify the electrical properties of graphene field-effect transistors. After modification, the transfer characteristics of chemically modified graphene show a reduction in the minimum conductivity, electron-hole mobility asymmetry, a decrease in the electron/hole mobility, and a positive shift of the charge neutrality point with broadening of the minimum conductivity region. These phenomena are attributed to a dediazoniation reaction and the adsorbates on the graphene surface.