Transit Phenomena in Organic Field‐Effect Transistors Through Kelvin‐Probe Force Microscopy
Transit Phenomena in Organic Field‐Effect Transistors Through Kelvin‐Probe Force Microscopy
复制标题
通过开尔文探针力显微镜观察有机场效应晶体管中的渡越现象
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
H. von Seggern
中科院分区：
文献类型：
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作者：
C. Melzer;C. Siol;H. von Seggern
研究了并五苯场效应晶体管从电子主导工作到空穴主导工作的电荷反转过程中沟道表面电势分布的时间演化。该测量允许在晶体管的亚阈值区域中确定载流子密度和电场依赖的空穴迁移率。
The temporal evolution of the surface-potential distribution in the channel of pentacene based field-effect transistors is investigated during the charge reversal from the electron to the hole dominated operation. This measurement allows the determination of the carrier density and electric field dependent hole mobility in the sub-threshold regime of the transistor.