Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy

Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy
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DOI:
10.1063/1.1413732
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发表时间:
2001-10
影响因子:
4
通讯作者:
J. Zhao;F. Matsukura;K. Takamura;E. Abe;D. Chiba;H. Ohno
J. Zhao;F. Matsukura;K. Takamura;E. Abe;D. Chiba;H. Ohno
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
J. Zhao;F. Matsukura;K. Takamura;E. Abe;D. Chiba;H. Ohno

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用固体源分子束外延技术在GaAs、(Al,Ga)Sb和GaSb上生长CrSb薄膜,发现其具有铁磁性。反射高能电子衍射和高分辨截面透射电子显微镜均表明该结构为锌尖晶石。剩余磁化强度的温度依赖性表明铁磁转变温度超过400 K。
Thin films of CrSb grown by solid-source molecular-beam epitaxy on GaAs, (Al, Ga)Sb, and GaSb are found to exhibit ferromagnetism. Reflection high-energy electron diffraction and high-resolution cross sectional transmission electron microscopy both indicate that the structure is zincblende. Temperature dependence of remanent magnetization shows that the ferromagnetic transition temperature is beyond 400 K.