Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition
Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition
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DOI：
10.1143/jjap.37.l1354
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发表时间：
1998-11-15
期刊：
影响因子：
--
通讯作者：
Yonehara, T
中科院分区：
文献类型：
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作者：
Hayashi, Y;Agata, Y;Yonehara, T
我们提出并在多孔硅（SPS）衬底上引入薄硅层来代替传统使用的硅衬底，以克服硅衬底上的砷化镓层（GaAs/Si）中的残余热应力。从X射线衍射、低温光致发光和拉曼散射的结果发现，残余热拉应力得到了显着降低。我们的数据清楚地表明，SPS 衬底是克服 GaAs/Si 问题的有前途的衬底。
We have proposed and introduced a thin Si layer over porous Si (SPS) substrate instead of the conventionally used Si substrate to overcome the residual thermal stress in GaAs layer on Si substrate (GaAs/Si). From the results of X-ray diffraction, low-temperature photoluminescence and Raman scattering, it was found that a significant reduction of the residual thermal tensile stress has been achieved. Our data clearly show that the SPS substrate is a promising substrate for overcoming the problems in GaAs/Si.