金属−酸化物同時電析法によるCo-Ce-O薄膜の作製
金属−酸化物同時電析法によるCo-Ce-O薄膜の作製
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金属氧化物同时电沉积法制备Co-Ce-O薄膜
DOI：
10.3379/jmsjmag.24.703
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发表时间：
2000
影响因子：
--
通讯作者：
壽崇 藤井
中科院分区：
文献类型：
--
作者：
直幸 藤田;寿彦 佐場;昌伸 伊崎;宗男 弥生;光輝 井上;壽崇 藤井
采用金属氧化物共沉积法制备了Co-Ce-O薄膜。从含有CoCl2和Ce(NO3)3的反应溶液中同时沉积了Co和Ce-O。薄膜的组成随反应溶液的浓度和电化学电位的变化而变化。在pH为3左右的缓冲液中加入H3BO3是制备金属钴的有效方法。
Co-Ce-O films were fabricated by a metal-oxide co-electrodeposition method. Co and Ce-O were deposited simultaneously from a reaction solution containing CoCl2 and Ce(NO3)3. The film composition was subject to change depending on the concentration of the reaction solution and the electrochemical potential. In order to obtain metal Co, it was effective to add H3BO3 to the reaction solution for the pH buffered agent of about pH 3.