Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi 2 Balls Embedded in Si Crystals
Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi 2 Balls Embedded in Si Crystals
复制标题
嵌入硅晶体中的反应沉积外延 (RDE) 生长的 β-FeSi 2 球的光致发光
DOI：
10.1143/jjap.37.l1513
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发表时间：
1998
影响因子：
1.5
通讯作者：
F. Hasegawa
中科院分区：
文献类型：
--
作者：
T. Suemasu;T. Fujii;Yuusuke Iikura;K. Takakura;F. Hasegawa
我们首次报道了反应沉积外延（RDE）生长的β-FeSi 2球在1.5 μm附近的光致发光。光致发光光谱与β-FeSi 2球的尺寸有关。我们观察到含有直径约100 nm的β-FeSi 2球的样品的光致发光，而含有直径为50-70 nm和150-200 nm的球的样品则没有。这是因为在前一种情况下，由于金属α-FeSi 2的混合物而存在非辐射复合中心，而在后一种情况下，由于β-FeSi 2球诱导的许多位错。
We report on the photoluminescence at around 1.5 µm from β-FeSi2 balls grown by reactive deposition epitaxy (RDE) and embedded in Si crystals for the first time. The photoluminescence spectra depended on the size of the β-FeSi2 ball. We observed photoluminescence from the sample containing about 100-nm-diameter β-FeSi2 balls, but not from the samples containing balls 50–70 nm and 150–200 nm in diameter. This is because of the existence of nonradiative recombination centers due to a mixture of metallic α-FeSi2 for the former case, and of many dislocations induced by β-FeSi2 balls for the latter case.