Charge Damage Caused by Electron Shading Effect
Charge Damage Caused by Electron Shading Effect
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电子遮蔽效应引起的电荷损伤
DOI：
10.1143/jjap.33.6013
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发表时间：
1994
影响因子：
1.5
通讯作者：
K. Hashimoto
中科院分区：
文献类型：
--
作者：
K. Hashimoto
覆盖有具有高纵横比开口的光致抗蚀剂图案的天线在各种处理等离子体中对栅极氧化物造成电荷损坏。这种损坏随着图案的纵横比而增加，甚至当测试晶片被切割成约5毫米见方的芯片并安装在具有绝缘层的晶片上时也会发生。这些结果证明了电子遮蔽模型：光刻胶图案遮蔽了天线，使其免受倾斜入射的电子的影响，从而导致在没有晶圆级电压差的情况下发生局部充电，这对于传统充电至关重要。当栅氧化层厚度仅从 8 nm 减小到 6 nm 时，这种机制造成的破坏电流就增加了十倍以上，这意味着遮蔽程度取决于栅充电电压。提出了一种改进的模型来适应这种强依赖性。
An antenna covered with photoresist patterns having high-aspect-ratio openings caused charge damage to the gate oxide in various processing plasmas. This damage increased with the pattern's aspect ratio, and occurred even when the test wafer was cut into chips about 5 mm square and mounted on a wafer with insulation. These results prove the electron shading model: the photoresist patterns shade the antenna from electrons of oblique incidence, resulting in local charging occurring without a wafer-scale voltage difference, which is essential for conventional charging. The damaging current from this mechanism increased by a factor of more than ten with a decrease in the gate oxide thickness only from 8 nm to 6 nm, implying that the degree of shading depends on the gate charging voltage. An improved model is proposed to accommodate this strong dependence.