Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates
Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates
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DOI：
10.1063/1.4955400
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发表时间：
2016-10-01
期刊：
影响因子：
6.1
通讯作者：
Shi, Li
中科院分区：
文献类型：
--
作者：
Pettes, Michael Thompson;Kim, Jaehyun;Shi, Li
我们报道了悬浮（Bi1-xSbx）(2)Te-3纳米板的平面内热电性能，其x范围为0.07至0.95，厚度范围为9至42 nm。本文的结果表明，随着锑浓度的增加，p型行为呈增加的趋势，并且在x处塞贝克系数和热电优值的最大值接近0.5。我们还使用四氟-四氰喹诺二甲烷（F-4-TCNQ）涂层调整了表面的外源掺杂。在室温下，晶格热导率在0.2-0.7 W m(-1) K-1范围内，低于未掺杂的超薄Bi2Te3纳米板。(C) 2016。
We report the in-plane thermoelectric properties of suspended (Bi1-xSbx)(2)Te-3 nanoplates with x ranging from 0.07 to 0.95 and thicknesses ranging from 9 to 42 nm. The results presented here reveal a trend of increasing p-type behavior with increasing antimony concentration, and a maximum Seebeck coefficient and thermoelectric figure of merit at x similar to 0.5. We additionally tuned extrinsic doping of the surface using a tetrafluoro-tetracyanoquinodimethane (F-4-TCNQ) coating. The lattice thermal conductivity is found to be below that for undoped ultrathin Bi2Te3 nanoplates of comparable thickness and in the range of 0.2-0.7 W m(-1) K-1 at room temperature. (C) 2016 Author(s).