Resistive switching properties of HfxZr1-xO2 thin films for flexible memory applications
Resistive switching properties of HfxZr1-xO2 thin films for flexible memory applications
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用于柔性存储器应用的 HfxZr1-xO2 薄膜的电阻开关特性
DOI：
10.1007/s10854-017-6837-2
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发表时间：
2017
影响因子：
2.8
通讯作者：
Liu Xingpeng
中科院分区：
文献类型：
--
作者：
Wu Zhipeng;Zhu Jun;Liu Xingpeng
研究了聚对苯二甲酸乙二酯衬底上Au/Ni/HZO/Au器件在RRAM应用中的灵活单极阻变特性。该器件表现出可重复的单极RS行为，具有约103的高OFF/ON比，并且存储器窗口可以在重复编程/擦除中保持至少1000个周期。在6.3 × 104 s时保留性能无下降。HZO样品的电流-电压特性表明，在低阻态和高阻态下，HZO样品分别响应欧姆接触和空间电荷限制电流。结合电导机制，电阻开关行为可以用导电丝模型来解释。RS机制归因于焦耳热引起的恢复和断裂以及外部电子注入引起的氧化还原反应。存储器装置还显示出良好的机械柔性。据信，基于HZO的存储器件在高性能、灵活的存储应用中具有巨大的潜力。
The flexible unipolar resistive switching characteristics of Au/Ni/HZO/Au devices on Polyethylene terephthalate substrates have been investigated for the RRAM applications. The devices demonstrated a bistable and reproducible unipolar RS behavior with a high OFF/ON ratio about 103, and the memory widow could be maintained in repetitive programming/erase at least 1000 cycles. The retention property has no degradation at 6.3 × 104seconds. The current–voltage characteristics of the HZO samples show that the Ohmic contact and space charge limited current are suggested to response for the low resistance state and high resistance state, respectively. Combined with the conductance mechanism, the resistive switching behaviors can be explained by the conductive filaments model. The RS mechanism is attributed to restore and rupture caused by the joule heating and the redox reaction induced by the external electron injection. The memory devices also show good mechanical flexibility. It is believed that the HZO-based memory device has great potential to be used in high performance, flexible memory applications.