Low-temperature thermal conductivity of bulk and film-like rubrene single crystals
Low-temperature thermal conductivity of bulk and film-like rubrene single crystals
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DOI：
10.1103/physrevb.83.113305
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发表时间：
2011-03-15
影响因子：
3.7
通讯作者：
Takeya, J.
中科院分区：
文献类型：
--
作者：
Okada, Y.;Uno, M.;Takeya, J.
测量了低至0.5K的块状和膜状Rubrene单晶的热导率，以便从其声子平均自由路径定量估计晶体缺陷的密度。由于Rubrene晶体声子的平均自由路径很长，其热导率在10K附近有一个明显的峰值，这表明在10(15)-10(16)cm(-3)范围内存在极低的缺陷密度，这取决于不同的生长方法。从气相中生长的晶体比从溶液中生长的晶体缺陷更少。这种方法甚至适用于用于场效应晶体管的微米厚的晶体，该晶体是为测量薄膜状样品的热导率而开发的新型薄膜装置。
Thermal conductivity of rubrene single crystals is measured for both bulk and film-like crystals down to 0.5 K in order to estimate the density of crystalline defects quantitatively from their phonon mean-free paths. The temperature profile of the rubrene crystals exhibit a pronounced peak at similar to 10 K in the thermal conductivity due to very long mean-free paths of their phonons, which indicates extremely low-level defect density in the region of 10(15)-10(16) cm(-3) depending on different growth methods. The crystals grown from the gas phase tend to have less defects than those grown from solution. The method is applied even for micrometer-thick crystals used for field-effect transistors developed for a new membrane device for thermal-conductivity measurement of film-like samples.