Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates.
Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates.
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DOI：
10.1021/nl500170m
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发表时间：
2014-04
期刊：
影响因子：
10.8
通讯作者：
Jiang Wu;Yanbo Li;J. Kubota;K. Domen;M. Aagesen;T. Ward;A. Sánchez;R. Beanland;Yunyan Zhang;M. Tang;S. Hatch;A. Seeds;Huiyun Liu
中科院分区：
文献类型：
--
作者：
Jiang Wu;Yanbo Li;J. Kubota;K. Domen;M. Aagesen;T. Ward;A. Sánchez;R. Beanland;Yunyan Zhang;M. Tang;S. Hatch;A. Seeds;Huiyun Liu
我们提出了自催化的p-n同质结1.7 eV的GaAsP核壳纳米线光电阴极生长在硅衬底上的分子束外延结合Pt纳米粒子作为析氢助催化剂的晶圆级制造。在AM 1.5G照明下，GaAsP纳米线光电阴极在0 V下相对于可逆氢电极产生4.5mA/cm（2）的光电流密度和0.5%的太阳能到氢的转换效率，这远高于先前报道的晶圆级III-V纳米线光电阴极的值。此外，已发现GaAsP比InGaP更耐光腐蚀。这些结果开辟了一个新的途径，开发有效的串联光电化学器件，通过在硅平台上制作GaAsP纳米线。
We present the wafer-scale fabrication of self-catalyzed p-n homojunction 1.7 eV GaAsP core-shell nanowire photocathodes grown on silicon substrates by molecular beam epitaxy with the incorporation of Pt nanoparticles as hydrogen evolution cocatalysts. Under AM 1.5G illumination, the GaAsP nanowire photocathode yielded a photocurrent density of 4.5 mA/cm(2) at 0 V versus a reversible hydrogen electrode and a solar-to-hydrogen conversion efficiency of 0.5%, which are much higher than the values previously reported for wafer-scale III-V nanowire photocathodes. In addition, GaAsP has been found to be more resistant to photocorrosion than InGaP. These results open up a new approach to develop efficient tandem photoelectrochemical devices via fabricating GaAsP nanowires on a silicon platform.