Metal-semiconductor nanocontacts: silicon nanowires
Metal-semiconductor nanocontacts: silicon nanowires
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DOI：
10.1103/physrevlett.85.1958
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发表时间：
2000-08
影响因子：
8.6
通讯作者：
Landman;Barnett;Scherbakov;Avouris
中科院分区：
文献类型：
--
作者：
Landman;Barnett;Scherbakov;Avouris
用大规模局域密度泛函模拟研究了硅纳米线从簇组装或从块体蚀刻，连接到铝电极和钝化。短（约0.6nm）线通过金属诱导的间隙状态被完全金属化，导致有限的电导（约e（2）/h）。对于较长的线（约2.5纳米）纳米级肖特基势垒开发的高度大于相应的体值的40%至90%。电输运需要掺杂依赖的栅极电压与电导谱表现出干涉共振由于弹道通道的散射的接触。
Silicon nanowires assembled from clusters or etched from the bulk, connected to aluminum electrodes and passivated, are studied with large-scale local-density-functional simulations. Short ( approximately 0.6 nm) wires are fully metallized by metal-induced gap states resulting in finite conductance ( approximately e(2)/h). For longer wires ( approximately 2.5 nm) nanoscale Schottky barriers develop with heights larger than the corresponding bulk value by 40% to 90%. Electric transport requires doping dependent gate voltages with the conductance spectra exhibiting interference resonances due to scattering of ballistic channels by the contacts.