Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing
Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing
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Intel 4 CMOS 技术采用先进 FinFET 晶体管，针对高密度和高性能计算进行了优化
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
N. Young
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作者：
B. Sell;S. An;J. Armstrong;D. Bahr;B. Bains;R. Bambery;K. Bang;D. Basu;S. Bendapudi;D. Bergstrom;R. Bhandavat;S. Bhowmick;M. Buehler;D. Caselli;S. Cekli;Vrsk. Chaganti;Y. Chang;K. Chikkadi;T. Chu;T. Crimmins;G. Darby;C. Ege;P. Elfick;T. Elko;S. Fang;C. Gaddam;M. Ghoneim;H. Gomez;S. Govindaraju;Z. Guo;W. Hafez;M. Haran;M. Hattendorf;S. Hu;Akshay Jain;S. Jaloviar;M. Jang;J. Kameswaran;V. Kapinus;A. Kennedy;S. Klopcic;Dilip Krishnan;J. Leib;Y.;N. Lindert;G. Liu;O. Loh;Y. Luo;S. Mani;M. Mleczko;S. Mocherla;P. Packan;M. Paik;A. Paliwal;R. Pandey;K. Patankar;L. Pipes;P. Plekhanov;C. Prasad;M. Prince;Gopalakrishnan Ramalingam;R. Ramaswamy;J. Riley;J. R. S. Perez;J. Sandford;A. Sathe;F. Shah;H. Shim;S. Subramanian;S. Tandon;M. Tanniru;D. Thakurta;T. Troeger;X. Wang;C. Ward;A. Welsh;S. Wickramaratne;J. Wnuk;S. Xu;P. Yashar;J. Yaung;K. Yoon;N. Young
A new advanced CMOS FinFET technology, Intel 4, is introduced that extends Moore’s law by offering 2X area scaling of the high performance logic library and greater than 20% performance gain at iso-power over Intel 7. The scaled high-performance library offers 50nm gate pitch, 30nm fin pitch and 30nm minimum metal pitch. This node delivers 8VT (4NVT + 4PVT) spanning a range of 190mV/180mV for N/PMOS, enabling designers to choose between power and speed requirements. EUV lithography is used extensively to simplify the process flow and improve yield. The interconnect stack features 16 metal layers with enhanced copper metallurgy at critical lower layers to deliver improved electromigration (EM) and lower line resistance (LR).
