Thresholds of plasma formation in silicon identified by optimizing the ablation laser pulse form.
Thresholds of plasma formation in silicon identified by optimizing the ablation laser pulse form.
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DOI：
10.1103/physrevlett.97.107601
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发表时间：
2006-09
影响因子：
8.6
通讯作者：
H. Dachraoui;W. Husinsky
中科院分区：
文献类型：
--
作者：
H. Dachraoui;W. Husinsky
使用进化算法和脉冲整形相结合的方法，我们已经发现，如果在激发激光脉冲后约200飞秒有效地沉积相当一部分激光能量，那么在大约150 mJ/cm2的注量下，硅中已经可以发生快速等离子体形成。非热固液相变导致材料中沉积能的增加。在质谱图中观察到了高电荷态离子。虽然脉冲优化程序使我们能够识别等离子体形成，但进一步的实验研究了激光脉冲宽度对烧蚀产率的影响，双脉冲相关实验为快速等离子体形成的出现提供了额外的证据。
Using an evolutionary algorithm combined with pulse shaping, we have identified that rapid plasma formation in Silicon can occur already at a fluence of about 150 mJ/cm2 if a substantial part of the laser energy is deposited efficiently around 200 fs after an exciting laser pulse. Nonthermal solid-to-liquid phase transition leads to the increase of the deposited energy in the material. Highly charged ions have been observed in the mass spectrum. While the pulse optimization procedure allowed us to identify the plasma formation, further experiments where the influence of the laser pulse width on the ablation yield was studied and Two-Pulse-Correlation experiments provided additional proof for the appearance of rapid plasma formation.