Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index material.

Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index material.
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DOI:
10.1364/ol.30.001518
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发表时间:
2005-06
期刊:
影响因子:
3.6
通讯作者:
J. Xi;M. Ojha;W. Cho;J. Plawsky;W. Gill;T. Gessmann;E. Schubert
J. Xi;M. Ojha;W. Cho;J. Plawsky;W. Gill;T. Gessmann;E. Schubert
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
J. Xi;M. Ojha;W. Cho;J. Plawsky;W. Gill;T. Gessmann;E. Schubert

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由半导体、四分之一波长透明电介质层和金属组成的三层全向反射器(ODR)对于所有入射角都具有高反射率。内部ODR(周围材料的折射率n >> 1.0)被证明,包括纳米多孔SiO2,低折射率材料(n = 1.23),以及致密的SiO2(n = 1.46)。GaP和Ag分别用作半导体和金属层。反射率测量,包括角度依赖性,提出。采用纳米多孔SiO2的ODR的计算的角度积分TE和TM反射率分别为R(int)/TE = 99.9%和R(int)/TM = 98.9%,表明ODR用于低损耗波导结构的高潜力。
Triple-layer omnidirectional reflectors (ODRs) consisting of a semiconductor, a quarter-wavelength transparent dielectric layer, and a metal have high reflectivities for all angles of incidence. Internal ODRs (ambient material's refractive index n >> 1.0) are demonstrated that incorporate nanoporous SiO2, a low-refractive-index material (n = 1.23), as well as dense SiO2 (n = 1.46). GaP and Ag serve as the semiconductor and the metal layer, respectively. Reflectivity measurements, including angular dependence, are presented. Calculated angle-integrated TE and TM reflectivities for ODRs employing nanoporous SiO2 are R(int)/TE = 99.9% and R(int)/TM = 98.9%, respectively, indicating the high potential of the ODRs for low-loss waveguide structures.