Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics
Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics
复制标题
DOI：
10.1063/1.3597796
复制
发表时间：
2011-05-30
影响因子：
4
通讯作者：
Sun, Nian X.
中科院分区：
文献类型：
--
作者：
Liu, Ming;Li, Shandong;Sun, Nian X.
在多铁性各向异性磁电阻（AMR）和巨磁电阻（GMR）异质结构中，实现了一种高能效的磁电阻电调制技术。利用强磁电耦合引起的巨电场（E-field）诱导的磁各向异性来控制磁化方向，从而动态地操纵AMR和GMR器件中的磁阻。设计并开发了一种多波段可调谐AMR场传感器，使测量范围提高了15倍。此外，本文还研究了自旋阀结构中巨磁电阻的两种电场确定方法。研究结果表明，通过电场而不是磁场来控制磁电阻是一种有效的方法，这对新型低功率电子和自旋电子器件具有巨大的潜力。(C)2011年美国物理学会。[doi 10.1063/1.3597796]
An energy-efficiency technique for electrically modulating magnetoresistance was demonstrated in multiferroic anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR) heterostructures. A giant electric field (E-field) induced magnetic anisotropy caused by a strong magnetoelectric coupling was utilized to control the orientation of magnetization and thus dynamically manipulate magnetoresistance in AMR and GMR devices. A multiband tunable AMR field sensor was designed and developed to dramatically enhance the measurement range by 15 times. In addition, two types of E-field determination of GMR in spin-valve structures are studied. The results indicate an energy efficiency approach to controlling magnetoresistance by E-field rather than magnetic field, which shows great potential for novel low power electronic and spintronic devices. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3597796]