Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
复制标题
室温纳米压印光刻的双层抗蚀剂方法
DOI：
10.1143/jjap.43.4050
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发表时间：
2003
影响因子：
1.5
通讯作者：
S. Matsui
中科院分区：
文献类型：
--
作者：
K. Nakamatsu;Kei;K. Tone;T. Katase;W. Hattori;Y. Ochiai;T. Matsuo;M. Sasago;H. Namatsu;M. Komuro;S. Matsui
一种利用伺服电机驱动功率的紧凑型纳米压印光刻(NIL)设备已经被开发出来。提出了一种以硅氧烷(HSQ)为顶层、AZ光刻胶为底层的室温压印光刻(RT-NIL)用双层抗蚀剂方法，在非平面上实现了高纵横比的抗蚀剂图形。对于O2反应离子刻蚀(RIE)，HSQ与AZ光刻胶的刻蚀速率比大于100，说明HSQ顶层具有足够的刻蚀耐受性。利用我们研制的近红外光装置，我们已经获得了100 nm线宽、1微米高的高纵横比纳米结构图案。
A compact nanoimprint lithography (NIL) apparatus using the driving power of a servomotor has been newly developed. A bilayer resist method using hydrogen silsequioxane (HSQ) as a top layer and AZ photoresist as a bottom layer has been proposed to achieve high-aspect resist patterns on a nonflat surface for room-temperature nanoimprint lithography (RT-NIL). The etching rate ratio of HSQ to AZ photoresist was higher than 100 for O2 reactive ion etching (RIE), indicating that the HSQ top layer has sufficient etching tolerance. We have achieved the high-aspect nanostructure patterns of 100-nm-linewidth and 1-µm-height using the NIL apparatus developed here.