High-Performance Superthin Oxide/Nitride/Oxide Stacked Dielectrics Formed by Low-Pressure Oxidation of Ultrathin Nitride
High-Performance Superthin Oxide/Nitride/Oxide Stacked Dielectrics Formed by Low-Pressure Oxidation of Ultrathin Nitride
复制标题
超薄氮化物低压氧化形成的高性能超薄氧化物/氮化物/氧化物堆叠电介质
DOI：
10.1143/jjap.34.1713
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发表时间：
1995
影响因子：
1.5
通讯作者：
Huang
中科院分区：
文献类型：
--
作者：
Han;H. Su;Huang
超薄氮化物薄膜在850℃低压干氧条件下氧化30 min，成功制备了高性能超薄氧化物/氮化物/氧化物（O/N/O）堆叠介质。这种O/N/O结构的低泄漏电流和高可靠性是由于氮化物上的顶部氧化物的生长，这一点得到了俄歇电子能谱（AES）深度剖面和逐级稀释hf刻蚀结果的证实。常用的在常压下湿式氧化氮化物不能达到低至46 Å的有效氧化厚度。此外，氮化物在常压下的干氧化只能产生氮化物/氧化物（N/O）结构，导致高泄漏电流。因此，我们的新技术在未来的动态随机存取存储器（DRAM）技术中是有前景的。
High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing ultrathin nitride films in low-pressure dry oxygen at 850° C for 30 min. The low leakage current and the high reliability of this O/N/O structure are attributed to the growth of the top oxide on the nitride, which is confirmed by Auger electron spectroscopy (AES) depth profiles and step-by-step diluted-HF etching results. The commonly used wet oxidation of the nitrides at atmospheric pressure cannot attain an effective oxide thickness of as low as 46 Å. Furthermore, the dry oxidation of nitrides at atmospheric pressure can only yield a nitride/oxide (N/O) structure, which results in high leakage current. Therefore, our novel technique is promising for future dynamic-random-access-memory (DRAM) technology.