Excitonic and pair-related photoluminescence in ZnSe nanowires
Excitonic and pair-related photoluminescence in ZnSe nanowires
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DOI：
10.1063/1.2885729
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发表时间：
2008-03
影响因子：
3.2
通讯作者：
A. saxena;Suxia Yang;U. Philipose;H. Ruda
中科院分区：
文献类型：
--
作者：
A. saxena;Suxia Yang;U. Philipose;H. Ruda
它已被确定，偏离化学计量在ZnSe晶体生长过程中的点缺陷，这影响其电子性质的结果。我们报告详细的光致发光的结果和系统的分析ZnSe纳米线。我们研究了光致发光从气相生长的未掺杂的ZnSe纳米线生长在过量的Zn条件下，特别是依赖于激发强度。发光光谱的特征在于强的近带边发光与可忽略的深能级发射。我们观察到激子发射在2.794 eV相关的中性施主在VSe。激子的结合能为7 meV，施主的结合能为35 meV。还观察到两个施主-受主对跃迁在2.714和2.686 eV，这可能与本征缺陷与其他本征缺陷或与常见的无意浅施主和受主的缺陷复合物。两个施主的电离能均为27 meV，而受主的电离能均为27 meV。
It has been established that deviations from stoichiometry during the growth of ZnSe crystals result in point defects, which influence its electronic properties. We report on detailed photoluminescence results and their systematic analysis for ZnSe nanowires. We studied photoluminescence from vapor-phase grown undoped ZnSe nanowires grown under excess Zn conditions, and in particular the dependence on excitation intensity. Luminescence spectra were characterized by strong near-band-edge luminescence with negligible deep-level emission. We observed excitonic emission at 2.794 eV related to the neutral donor at VSe. The binding energy of the exciton was found to be 7 meV, and that of the donor was 35 meV. Two donor-acceptor pair transitions at 2.714 and 2.686 eV were also observed, which can be related to the defect complexes of native defects with other native defects or with common unintentional shallow donors and acceptors. The ionization energies of both donors were 27 meV, whereas those of the acceptor...