Intrinsic gettering Based on rapid thermal annealing in germanium-doped Czochralski silicon
Intrinsic gettering Based on rapid thermal annealing in germanium-doped Czochralski silicon
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DOI：
10.1063/1.2436829
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发表时间：
2007-02
影响因子：
3.2
通讯作者：
Jiahe Chen;Deren Yang;Xiangyang Ma;Hong Li;D. Que
中科院分区：
文献类型：
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作者：
Jiahe Chen;Deren Yang;Xiangyang Ma;Hong Li;D. Que
研究了掺锗直拉 (CZ) 硅片在涉及快速热退火 (RTA) 的不同热工艺下的本征吸杂 (IG) 效应。研究表明，通过RTA处理的热循环加上低温-高温两步退火或高温单步退火，可以在掺锗直拉（GCZ）硅片中产生高质量的裸露区和高密度体微缺陷区。此外，与传统的CZ硅片相比，GCZ硅片中形成了更多的氧沉淀，表明锗掺杂增强了CZ硅片的IG能力。该现象被认为是由于与锗的存在相关的空位浓度的增加，导致在RTA处理期间GCZ硅片中生成Ge-V相关络合物。
The intrinsic gettering (IG) effects under different thermal processes involved with rapid thermal annealing (RTA) in Czochralski (CZ) silicon wafers with germanium doping have been investigated. It has been shown that both good quality denuded zones and high-density bulk microdefect regions could be generated in germanium-doped CZ (GCZ) silicon wafers through thermal cycles of RTA treatments plus either low-high temperature two-step annealing or high temperature single-step annealing. Moreover, more oxygen precipitation was formed in GCZ silicon wafers in comparison with conventional CZ silicon wafers, indicating the enhancement of IG capability for CZ silicon wafers by the germanium doping. The phenomena have been considered to be ascribed to the increase of vacancy concentration associated with the presence of germanium, which results in the generation of Ge-V-related complexes in GCZ silicon wafers during RTA treatments.