Large critical currents and improved epitaxy of laser ablated Ag-doped YBa2Cu3O7-δ thin films
Large critical currents and improved epitaxy of laser ablated Ag-doped YBa2Cu3O7-δ thin films
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DOI：
10.1063/1.109014
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发表时间：
1993-06
影响因子：
4
通讯作者：
Dhananjay Kumar;M. Sharon;R. Pinto;P. Apte;S. Pai;S. Purandare;L. C. Gupta;R. Vijayaraghavan
中科院分区：
文献类型：
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作者：
Dhananjay Kumar;M. Sharon;R. Pinto;P. Apte;S. Pai;S. Purandare;L. C. Gupta;R. Vijayaraghavan
激光烧蚀YBa 2Cu 3 O 7 −δ薄膜的显微结构和临界电流密度。%的Ag。在77 K时，用5 wt. %的YBaCuO掺杂的100 μ SrTiO 3衬底上实现了高达1.4×107 A cm-2的临界电流密度。%的Ag，这已被发现是最佳的。有证据表明，改进的微观结构和外延，这是一个由银引起的晶粒扩大和对齐的结果是负责观察到的临界电流的高值。
Microstructure and critical current densities of laser ablated YBa2Cu3O7−δ thin films doped with 2–20 wt. % Ag have been studied. A critical current density as high as 1.4×107 A cm−2 at 77 K has been realized on 〈100〉 SrTiO3 substrates with YBaCuO films doped with 5 wt. % Ag which has been found to be the optimum. Evidence indicates that the improved microstructure and epitaxy which is a consequence of grain enlargement and alignment caused by Ag is responsible for the high values of critical currents observed.