Understanding GaN/InGaN core–shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods
Understanding GaN/InGaN core–shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods
复制标题
DOI：
10.1088/1361-6528/aa9050
复制
发表时间：
2017-11
期刊：
影响因子：
3.5
通讯作者：
C. Tessarek;S. Rechberger;C. Dieker;M. Heilmann;E. Spiecker;S. Christiansen
中科院分区：
文献类型：
--
作者：
C. Tessarek;S. Rechberger;C. Dieker;M. Heilmann;E. Spiecker;S. Christiansen
GaN微米棒被用作随后通过金属有机气相外延的InGaN量子阱（QW）和量子点沉积的基础。壳沿着棒侧壁的覆盖率取决于棒生长时间，并且对于较短的棒生长时间获得完全覆盖。进行透射电子显微镜测量以揭示InGaN层在侧壁刻面和顶部刻面上的结构特性。在微棒和微棒表面上的层的存在下，将讨论相对于GaN和InGaN的生长。一个详细的模型将解释形成的多个SiN层和部分和全部覆盖的核心周围的壳。阴极发光测量进行分析InGaN发射特性沿着微棒和研究这种六边形核壳结构的微谐振器特性。首次报道了GaN微棒/InGaN非极性QW核壳结构中Q值为1200的高品质因子回音壁模。GaN/InGaN核壳微棒有望成为低阈值激光二极管和超灵敏光学传感器的有前途的构建块。
GaN microrods are used as a basis for subsequent InGaN quantum well (QW) and quantum dot deposition by metal-organic vapor phase epitaxy. The coverage of the shell along the sidewall of rods is dependent on the rod growth time and a complete coverage is obtained for shorter rod growth times. Transmission electron microscopy measurements are performed to reveal the structural properties of the InGaN layer on the sidewall facet and on the top facet. The presence of layers in the microrod and on the microrod surface will be discussed with respect to GaN and InGaN growth. A detailed model will be presented explaining the formation of multiple SiN layers and the partial and full coverage of the shell around the core. Cathodoluminescence measurements are performed to analyze the InGaN emission properties along the microrod and to study the microresonator properties of such hexagonal core–shell structures. High quality factor whispering gallery modes with Q ∼ 1200 are reported for the first time in a GaN microrod/InGaN non-polar QW core–shell geometry. The GaN/InGaN core–shell microrods are expected to be promising building blocks for low-threshold laser diodes and ultra-sensitive optical sensors.