Tunnel anisotropic magnetoresistance in graphene with Rashba spin–orbit interaction
Tunnel anisotropic magnetoresistance in graphene with Rashba spin–orbit interaction
复制标题
DOI：
10.1088/0953-8984/23/43/435302
复制
发表时间：
2011-11
期刊：
影响因子：
--
通讯作者：
Z. Niu
中科院分区：
文献类型：
--
作者：
Z. Niu
采用非平衡绿色函数方法研究了Rashba型自旋轨道相互作用（RSOI）下石墨烯基正常/铁磁势垒/正常结中的弹道输运.研究发现，由于铁磁交换耦合和RSOI之间的相互作用，铁磁势垒中的能量色散依赖于磁化方向。通过改变磁化方向来改变电导，从而导致隧道各向异性磁阻（TAMR）。预测的TAMR效应振荡的RSOI强度或现场的能量，这是有效地控制的栅极电压，使该结在自旋电子学应用非常有前途。
Ballistic transport in a graphene-based normal/ferromagnetic barrier/normal junction in the presence of Rashba-type spin–orbit interaction (RSOI) is investigated by the non-equilibrium Green’s function approach. It is found that due to the interplay between ferromagnetic exchange coupling and RSOI, the energy dispersion in the ferromagnetic barrier depends on the magnetization direction. The conductance changes by varying the magnetization direction, resulting in a tunnel anisotropic magnetoresistance (TAMR). The predicted TAMR effect oscillates with the RSOI strength or on-site energy, which is efficiently controllable by the gate voltage, making this junction very promising in spintronics applications.