GENERATION OF 110 GHZ TRAIN OF SUBPICOSECOND PULSES IN 1.535-MU-M SPECTRAL REGION BY PASSIVELY MODELOCKED INGAASP/INP LASER-DIODES
GENERATION OF 110 GHZ TRAIN OF SUBPICOSECOND PULSES IN 1.535-MU-M SPECTRAL REGION BY PASSIVELY MODELOCKED INGAASP/INP LASER-DIODES
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DOI：
10.1049/el:19940238
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发表时间：
1994-02-17
影响因子：
1.1
通讯作者：
KHRUSHCHEV, IY
中科院分区：
文献类型：
--
作者：
DERYAGIN, AG;KUKSENKOV, DV;KHRUSHCHEV, IY
在连续波泵浦作用下，采用无源锁模方法在体有源层InGaAsP半导体激光器中产生亚皮秒光脉冲。可饱和吸收区是通过在二极管表面深注入重离子形成的。在不使用任何外部交流源的情况下，以110 GHz的重复率实现宽度为0.64 ps的光脉冲。连续工作50 h后，光谱和自相关迹线未见变化。
Subpicosecond optical pulses are generated by passive modelocking in bulk active layer InGaAsP semiconductor lasers under CW pumping. The saturable absorber regions are formed by deep implantation of heavy ions into the diode facets. Optical pulses with 0.64 ps width are realised at 110 GHz repetition rate without using any external AC sources. No changes in spectral and autocorrelation traces were observed after 50 h of CW operation.