Ultrathin Si films grown epitaxially on porous silicon
Ultrathin Si films grown epitaxially on porous silicon
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在多孔硅上外延生长超薄硅薄膜
DOI：
10.1016/0169-4332(91)90366-r
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发表时间：
1991
影响因子：
6.7
通讯作者：
A. Hiraki
中科院分区：
文献类型：
--
作者：
T. Yasumatsu;Tsuyohito Ito;H. Nishizawa;A. Hiraki
利用反射高能电子衍射（RHEED）、高分辨扫描电子显微镜（SEM）和卢瑟福背散射谱（RBS）研究了在Si（111）阳极氧化多孔硅（PS）衬底上的同质外延生长。Si生长在具有各种孔隙率（SiO2）的PS衬底上在760-820°C的衬底温度下进行，导致对于通过Si束的SiO2的原位化学蚀刻，高于800°C的衬底温度是期望的。当SiCp < 47%时，完成7 × 7结构所需的Si厚度随着孔隙率逐渐增加，而当SiCp> 47%时，Si厚度急剧增加。这些结果进行了讨论的顶部PS表面的结构。与单速率阳极氧化的结果相比，还讨论了双速率阳极氧化（首先在5 mA/cm 2下，其次在50 mA/cm 2下）的PS基板的有效性。
Homoepitaxial growth on a porous silicon (PS) substrate anodized from Si(111) was investigated by reflection high energy electron diffraction (RHEED), high resolution scanning electron microscope (SEM) and Rutherford backscattering spectrometry (RBS). The Si growth was carried out on a PS substrate with various porosities (ϱp) at substrate temperatures of 760–820°C, resulting in that substrate temperatures above 800°C are desirable for an in-situ chemical etching of SiO2by a Si beam. For ϱp< 47% the Si thickness necessary to complete the 7 × 7 structure increases gradually with the porosity, while it increases drastically with ϱp> 47%. These results are discussed in relation to the structure of the top PS surface. The effectiveness of the PS substrate anodized with dual rates (first at 5 mA/cm2and secondly at 50 mA/cm2) is also discussed in comparison to the results for the single rate anodization.