Germanium orthogonal strip detectors with amorphous-semiconductor contacts
Germanium orthogonal strip detectors with amorphous-semiconductor contacts
复制标题
具有非晶半导体触点的锗正交带状探测器
DOI：
10.1109/nssmic.1999.842475
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
R. A. Koreger
中科院分区：
文献类型：
--
作者：
P. Luke;M. Amman;B. Phlips;W. N. Johnson;R. A. Koreger
锗正交条探测器是用非晶态-半导体接触制成的。非晶-半导体接触制造工艺相对简单，能够制造细节距电极结构。非晶态-半导体接触的双极阻挡行为使其可以在探测器的两侧使用，取代了传统的B离子注入和Li扩散接触。用该技术制作了5/SPL次/5正交条探测器。给出了该探测器的实验结果。
Germanium orthogonal strip detectors have been produced using amorphous-semiconductor contacts. The amorphous-semiconductor contact fabrication process is relatively simple, and it is capable of producing fine-pitched electrode structures. The bipolar blocking behavior of the amorphous-semiconductor contact permits its use on both sides of a detector, replacing conventional B ion implanted and Li diffused contacts. A 5/spl times/5 orthogonal strip detector has been produced using this technique. Experimental results from this detector are presented.