In situ observation of hydrogenated amorphous silicon surfaces in electron cyclotron resonance hydrogen plasma annealing
In situ observation of hydrogenated amorphous silicon surfaces in electron cyclotron resonance hydrogen plasma annealing
复制标题
电子回旋共振氢等离子体退火中氢化非晶硅表面的原位观察
DOI：
10.1063/1.369242
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
Ryoichi Nozawa;H. Takeda;Masafumi Ito;M. Hori;T. Goto
利用原位偏振调制红外反射吸收光谱（PM-IR-RAS）研究了氢化非晶硅（a-Si：H）薄膜在电子回旋共振（ECR）H_2等离子体中的表面反应。a-Si：H薄膜的表面暴露于ECR H2等离子体在不同的衬底温度。为了区分离子物种和原子氢的作用，采用永磁体来阻挡入射到衬底上的带电物种。用原位PM-IR-RAS观察了a-Si：H薄膜在氢原子作用下的表面反应，并与ECR H_2等离子体作用下的结果进行了比较。结果发现，在室温下，原子氢与表面附近的Si-H2和（SiH 2）n键反应，并且不蚀刻大部分的膜。此外，氢原子渗入a-Si：H薄膜的体相，促进了硅网络的改性，这也是a-Si：H薄膜的衬底特性之一。
The surface reactions of hydrogenated amorphous silicon (a-Si:H) films exposed to electron cyclotron resonance (ECR) H2 plasma, which is called ECR H2 plasma annealing, has been investigated by in situ polarization modulation infrared reflection absorption spectroscopy (PM-IR-RAS). The surfaces of a-Si:H films were exposed to ECR H2 plasmas at various substrate temperatures. To distinguish the roles of ionic species and atomic hydrogens, permanent magnets were employed to shut out charged species incident on the substrate. The surface reactions of a-Si:H films exposed to only atomic hydrogens were observed by in situ PM-IR-RAS and the results were compared with those exposed to ECR H2 plasmas. It was found that atomic hydrogens reacted with the Si–H2 and (SiH2)n bonds in the vicinity of the surfaces and did not etch the bulk of the films at room temperature. Moreover, it was suggested that atomic hydrogens penetrated into the bulk of a-Si:H film and promoted the Si-network modification as the substrate te...