ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS
ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS
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DOI：
10.1109/t-ed.1969.16754
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发表时间：
1969-01-01
影响因子：
3.1
通讯作者：
BLACK, JR
中科院分区：
文献类型：
--
作者：
BLACK, JR
最近，电迁移已被确定为采用横截面积不足的金属膜导体的半导体器件的潜在磨损失效模式。对电迁移的简要综述表明，尽管几十年来人们已经知道了电迁移的作用，但所涉及的大量过程仍然是未知的，特别是对于复杂的金属和溶质离子。早期的设计方程进行了改进，以考虑导体膜的横截面积以及膜的结构，膜的温度，和电流密度。设计曲线，允许建设高可靠性的“无限寿命”铝导体的最大电流和温度应力的特定条件下预期使用。它还表明，正梯度，在电子流方面，温度，电流密度，或离子扩散系数缩短导体寿命，因为它们存在的区域，空位凝聚形成空隙。
Recently, electromigration has been identified as a potential wear-out failure mode for semiconductor devices employing metal film conductors of inadequate cross-sectional area. A brief survey of electromigration indicates that although the effect has been known for several decades, a great deal of the processes involved is still unknown, especially for complex metals and solute ions. Earlier design equations are improved to account for conductor film cross-sectional area as well as film structure, film temperature, and current density. Design curves are presented which permit the construction of high reliability "infinite life" aluminum conductors for specific conditions of maximum current and temperature stress expected in use. It is also shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.