Thermal Shock Damage Behaviour of 3D-C/SiC
Thermal Shock Damage Behaviour of 3D-C/SiC
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发表时间：
2003
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通讯作者：
Ao Qiang
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作者：
Ao Qiang
Thermal shock behavior of 3D-C/SiC and recrystallization of SiC were investigated under two temperature drops(ΔΤ=600℃,800℃)and different stress in light-radiation thermal shock testing machine. The results indicate that thermal shock curve evaluated by Young′s modulus was similar to that by electrical resistance, and they approximately consisted of three stages, that is the rapid damage stage, the stable damage stage, and then the damage sharply accelerated stage. However, exceptional thermal shock curve expressed by electrical resistance only occurred to drop in the initial stage. Moreover, thermal shock behavior of 3D-C/SiC was distinctly superior to that of recrystallization of SiC, and when the deposition time of pyrocarbon was 20h, 3D-C/SiC possessed the longest thermal shock life.
