Strain sensors and pressure sensors using Cr─N thin films for high-pressure hydrogen gas
Strain sensors and pressure sensors using Cr─N thin films for high-pressure hydrogen gas
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使用Cr─N薄膜的高压氢气应变传感器和压力传感器
DOI：
10.1002/ecj.12111
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发表时间：
2018
影响因子：
0.3
通讯作者：
H. Mikami
中科院分区：
文献类型：
--
作者：
E. Niwa;H. Mikami
研究了氢对Cr-N应变敏感薄膜的影响，该薄膜的应变敏感系数约为14，从而开发了一种高灵敏度的高压氢气应变传感器。结果发现，薄膜不受氢的影响，氧化锆衬底上的Cr-N薄膜样品对压力表现出敏感的线性输出。认为Cr-N薄膜不仅可以作为高灵敏度的应变传感器，而且可以作为高压氢气中的无膜片压力传感器。
The authors investigated the influence of hydrogen on Cr-N strain sensitive thin films, which have a gauge factor of about 14, to develop a high sensitive strain sensor for high pressure hydrogen gas. As a result, it was found that the thin film was not affected by hydrogen and the specimen of Cr-N thin film on Zirconia substrate showed a sensitive and linear output to the pressure. It was considered that the Cr-N thin films were able to be expected as not only high sensitive strain sensors but also diaphragm-less pressure sensors in high pressure hydrogen gas.
电子级储氢材料
DOI：
--
发表时间：
2010
期刊：
影响因子：
--
作者：
H.Nakajima;R.Nakamura;森永正彦
通讯作者：
森永正彦