Multicarrier analysis of semiconducting films by including the effect of magnetoresistance: Application in β-FeSi2 films
Multicarrier analysis of semiconducting films by including the effect of magnetoresistance: Application in β-FeSi2 films
复制标题
通过考虑磁阻效应对半导体薄膜进行多载流子分析：在 β-FeSi2 薄膜中的应用
DOI：
10.1063/1.1815052
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发表时间：
2004
影响因子：
3.2
通讯作者：
C. Dimitriadis
中科院分区：
文献类型：
--
作者：
D. Tassis;D. Evangelinos;O. Valassiades;C. Dimitriadis
本文介绍了一种基于变磁场测量的霍尔和磁阻数据的半导体β-FeSi_2薄膜的多载流子分析方法。我们利用纵向和横向电阻率分量来提取每个载流子的浓度和迁移率。非线性拟合被用来同时拟合磁电阻率和霍尔电阻率数据与磁场。准则和程序，以及选择一个适当的函数最小化进行了讨论。将该方法应用于β-FeSi 2薄膜中，发现了多载流子的存在，解释了霍尔电压对磁场的非线性依赖关系。在不同温度下的霍尔数据的分析揭示了最可能的散射机制和载流子浓度的热激活行为。
A method of multicarrier analysis of semiconducting β-FeSi2 thin films is described, based on Hall and magnetoresistance data from variable magnetic field measurements. We exploit both the longitudinal and transverse resistivity components to extract the concentration and mobility of each carrier. Nonlinear fitting is used to fit simultaneously the magnetoresistivity and Hall resistivity data versus the magnetic field. The criteria and the procedure, as well as the selection of a proper function for minimization are discussed. Application of the proposed method in β-FeSi2 thin films revealed the presence of multiple carriers, explaining the nonlinear dependence of the Hall voltage on the magnetic field. Analysis of the Hall data at various temperatures revealed the most probable scattering mechanisms and a thermally activated behavior of the carrier concentration.