Photoluminescence of polycrystalline CuInSe2 thin films
Photoluminescence of polycrystalline CuInSe2 thin films
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多晶 CuInSe2 薄膜的光致发光
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
H. Schock
中科院分区：
文献类型：
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作者：
S. Zott;K. Leo;M. Ruckh;H. Schock
用特殊设计的样品研究了多源物理气相沉积生长的CuInSe2薄膜在较宽的成分范围内的光致发光。测量结果与激发强度和温度的关系与薄膜的Cu/In比x相关，范围为1.47≤x≤0.46。所有的富铜样品(x≳1.0)都显示出与成分无关的清晰的峰位。在略富In区(x=0.90)，高效率CuInSe_2太阳电池的最佳吸收层被认为是施主-受主对跃迁引起的两条宽的发射线。对于非常富In的样品(x<；0.67)，观察到主导相变的蓝移。
The photoluminescence of CuInSe2 thin films grown by multisource physical vapor deposition is investigated over a wide composition range with a specially designed sample. Measurements as a function of excitation intensity, and temperature are correlated with the Cu/In ratio x of the films ranging from 1.47≤x≤0.46. All the Cu–rich samples (x≳1.0) show well‐defined peak positions independent of the composition. In the slightly In‐rich region (x=0.90) where the best absorber layers for high efficiency CuInSe2 solar cells are expected, two broad emission lines are ascribed to donor‐acceptor pair transitions. For very In‐rich samples (x<0.67), a blue shift of the dominant transition is observed.