4H-SiC trench MOSFET with integrated fast recovery MPS diode
4H-SiC trench MOSFET with integrated fast recovery MPS diode
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DOI：
10.1049/el.2017.3198
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发表时间：
2017-11
影响因子：
1.1
通讯作者：
T. Dai;C. W. Chan;Xc Deng;Huaping Jiang;P. Gammon;M. Jennings;P. Mawby
中科院分区：
文献类型：
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作者：
T. Dai;C. W. Chan;Xc Deng;Huaping Jiang;P. Gammon;M. Jennings;P. Mawby
提出了一种4H-SiC沟槽金属氧化物半导体场效应晶体管(MOSFET)的集成集成PIN肖特基二极管(MPS)设计。肖特基触点首次嵌入到沟槽结构的底部。该集成设计可以同时实现氧化层和肖特基接触面的低电场，提高了氧化层的可靠性，减少了肖特基二极管的漏电。与使用外部肖特基二极管的传统方法相比，MPS二极管的集成减少了芯片总面积和所需的芯片数量。
A 4H-SiC trench metal-oxide-semiconductor field-effect-transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.